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Silicon Schottky Diode
BAT 65
Features * Low-power Schottky rectifier diode * For low-loss, fast-recovery rectification, meter protection, bias isolation and clamping purposes * Miniature plastic package for surface mounting (SMD)
Type BAT 65
1)
Marking White/C
Ordering Code 1 Q62702-A990 C
Pin Configuration 2 A
Package1) SOD-123
Dimensions see page 313.
Maximum Ratings Parameter Reverse voltage Forward current Average forward current, f = 50 Hz Surage forward current, t 10 ms Total power dissipation, TS 100 C Junction temperature Storage temperature range Symbol
VR IF IFAV IFSM Ptot Tj Tstg
Limit Values 40 750 500 2.5 600 150 - 55 ... + 150
Unit V mA mA A mW C C
Semiconductor Group
1
05.96
BAT 65
Thermal Resistance Parameter Junction - soldering point Junction to ambient1)
1)
Symbol
Limit Values 80 150
Unit K/W K/W
RthJS RthJA
Package mounted on epoxy PCB 40 mm x 40 mm x 1.5 mm/6 cm2 Cu.
Electrical Characteristics TA = 25 C, unless otherwise specified. Parameter Reverse current VR = 30 V VR = 30 V, TA = 65 C Forward voltage IF = 10 mA IF = 100 mA IF = 250 mA IF = 750 mA Diode capacitance VR = 10 V, f = 1 MHz Symbol Limit Values min. typ. - - 0.305 0.38 0.44 0.580 8.4 max. A - - 50 900 V - - - - 0.40 - 0.70 - pF - 12 Unit
IR
VF
CT
Semiconductor Group
2
BAT 65
Forward Current IF = f (VF)
Reverse Current IR = f (VR)
Forward Current IF = f (TS; TA1))
1)
Package mounted on epoxy PCB 40 mm x 40 mm x 1.5 mm/6 cm2 Cu.
Semiconductor Group
3
BAT 65
Permissible Load RthJS = f (tP)
Permissible Pulse Load Ifmax/IfDC = f (tP)
Semiconductor Group
4

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